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Voltage-controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction

Mar 25, 2019

A research team led by Prof. ZENG Zhongming from the Nano Fabrication Facility of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences proposed a voltage-controlled spintronic device that enables low-energy neuromorphic computing, with the stochastic behavior of the device being managed by an applied electric field via voltage-controlled magnetic anisotropy. This study was published in Physical Reviews Applied.
Neuromorphic computing utilizes the hardware to mimic the functionalities involved in the neurons and synapses in the human brain. Neuromorphic computing based on stochastic spintronic units has recently attracted great attention. However, controlling such a stochastic system with high energy efficiency remains a challenge.

A spintronic device to mimic artificial neuron for neuromorphic computing was developed by researchers in this study. This spintronic neuron device can produce stochastic spiking signal with an ultra-low power (< 1 nW) while the frequency of the spiking signal is controllable by magnetic field or voltage bias.

They applied this spintronic neuron device to construct an artificial neural network, and realized the recognition of the Mixed National Institute of Standards and Technology (MNIST) handwritten digits with a recognition rate reaching 95%.

This study enables to mimic neurons using spintronic devices with low energy consumption and multi-control methods, which advances the quest to create energy-efficient spintronic systems for brain-like cognitive computing.

Contact

ZENG Zhongming

Suzhou institute of Nano-Tech and Nano-Bionic

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Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction

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