Feeling the Heat—Changes in the Human Perception of Temperature over China in Recent Decades[Apr 27, 2017]
How has thermal comfort changed in recent decades over China against the background of the global warming? Scientists carried out an investigation over mainland China using the index of effective temperature (ET), which combines the effects of temperature, humidity and wind speed. The human perception of temperature was classified on a scale based on the values of the ET index, ranging from very cold, cold, cool, comfortable, to warm, hot, and very hot.
Scientists Propose a Continuous Carbon Nitride Polyhedron Assembly for High-Performance Flexible Supercapacitors[Apr 27, 2017]
Recently, a team of researchers, led by Prof. CHEN Wei at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, proposed a novel assembly strategy to fabricate a flexible supercapacitor with high energy capacity and long cycling life.
LIU Jinhuai and KONG Lingtao's joint team of Institute of Intelligent Machines, Hefei Institutes of Physical Science,Chinese Academy of Sciences, successfully prepared a new kind of adsorbent to remove fluoride and organic micropollutants for the first time.
The venerable Domain Name System (DNS) is becoming known for fragility, and keeping track of your own favourite sites' IP addresses is a pain. So a group of researchers want to automate the upkeep of hosts to give users an emergency backup if their provider blacks out.
Prof. LI Jie and his team from Xishuangbanna Tropical Botanical Garden (XTBG) of the Chinese Academy of Sciences used existing molecular barcodes: three cpDNA regions (rbcL, matK, psbA–trnH) and the nuclear marker ITS (ITS1+5.8S+ITS2), as well as the subunit ITS2, to examine the taxonomic classification and phylogeny of Lauraceae.
Recently, Prof. ZHANG Baoshun's group at Suzhou Institute of Nano-tech and Nano-bionics of Chinese Academy of Sciences presented a fabrication technology of high performance AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) using in-situ pre-deposition plasma nitridation and LPCVD-Si3N4 gate insulator.
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