Aluminum oxide materials feature good thermal and mechanical stability and they are difficult to participate directly in chemical reactions under mild conditions. A research group at Institute of Chemistry of Chinese Academy of Sciences led by Prof. HE Shenggui demonstrated that a single rhodium atom can promote the participation of five oxygen atoms to oxidize carbon monoxide molecules from a nine-atom rhodium–aluminum oxide cluster RhAl2O6+.
A team of Chinese scientists has made a significant stride in chip technology by developing dielectric wafers made of artificial sapphire. Their groundbreaking research, published in Nature on Wednesday, lays a crucial foundation for the development of more power-efficient chips.
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