InGaN-based superluminescent diodes (SLDs) has been explored as an alternative light source to the traditional light-emitting diodes and laser diodes for solid-state lighting, display and high-speed visible-light communications, due to its nature of high-brightness, low temporal coherence, low delay and eye-friendly broad emission spectrum.
Recently, a research team led by Prof. SUN Qian and Prof. YANG Hui at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) of the Chinese Academy of Sciences demonstrated the first InGaN-based multiple quantum wells SLD monolithically grown on silicon substrates. The study was published in ACS Photonics.
The researchers used metal-organic chemical vapor deposition to create the III-nitride SLD structure on (111) silicon substrates. In the experiment, the index-guided SLDs were formed with a J-shaped ridge waveguide to suppress optical feedback oscillation.
Furthermore, they studied the electroluminescence spectrum, polarization characteristics and the RC-delay of the SLDs. The SLDs presented a large degree of polarization of 98% and a low RC-delay of 1.77 GHz, suggesting highly promising applications in high-speed transmitter for VLC.
This study opens up the opportunities for cost-effective compact on-chip light sources for speckle-free displays and visible light communications.
Ice building up on the wings and tail of an aircraft flying during freezing rain is a major concern that could lead to high-speed crashes, and a new Chinese study published Tuesday may help explain why such a dangerous phenomenon occurs. A research team from Shanghai Jiao...
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